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  Datasheet File OCR Text:
 Ordering number:ENN6121
N-Channel Silicon MOSFET
2SK2919
Ultrahigh-Speed Switching Applications
Features
* Low ON resistance. * Ultrahigh-speed switching. * On-chip high-speed diode (trr=100ns).
Package Dimensions
unit:mm 2128
[2SK2919]
8.2 7.8 6.2 3
0.4 0.2
0.6
4.2
1.2
8.4 10.0
1.0 2.54
1
2
1.0 2.54
0.3 0.6
5.08 10.0 6.0
6.2 5.2
7.8
0.7
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25C Conditions Ratings
1 : Gate 2 : Source 3 : Drain SANYO : ZP
2.5
Unit 600 30 2 8 35 150 V V A A W C C
-55 to +150
Electrical Characteristics at Ta = 25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss ID=10mA, VGS=0 VDS=480V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A VGS=10V, ID=1A VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 2.0 0.8 1.5 3.2 400 55 15 4.3 Conditions Ratings min 600 1.0 100 3.0 typ max Unit V mA nA V S pF pF pF
Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source.
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21400TS (KOTO) TA-2283 No.6121-1/4
2SK2919
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Diode Reverse recovery time Symbol td(on) tr td(off) tf VSD trr Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=2A, VGS=0 IS=2A, di/dt=100As 100 Ratings min typ 10 12 65 40 1.5 max Unit ns ns ns ns V ns
Switching Time Test Circuit
10V 0V VGS VDD=200V ID=1A RL=200 D VOUT
VGS PW=1s D.C.0.5%
G 2SK2919 P.G 50 S
5
I D - VDS
3.6 3.2
ID - VGS
VDS=10V
Tc=-25C
25C
4
6.0V
5.5V
2.8
Drain Current, ID - A
Drain Current, ID - A
10V
3
2.4
75C
2.0 1.6 1.2 0.8
5.0V
2
4.5V
1
4.0V VGS=3.5V
0 0 4 8 12 16 20
0.4 0 0 2 4 6 8 10 12 14
Drain-to-Source Voltage, VDS - V
Gate-to-Source Voltage, VGS - V
6
| yfs | - I D
5
R DS(on) - VGS
Tc=25C
Forward Transfer Admittance, | yfs | - S
VDS=10V
3
1.0 7 5 3 2
C -25 Tc= C 75
25
C
Static Drain-to-Source On-State Resistance, RDS (on) -
2
5
4
ID=2A 1A
3
0.5A
2
0.1 7 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
1
0
0
2
4
6
8
10
12
14
Drain Current, ID - A
Gate-to-Source Voltage, VGS - V
No.6121-2/4
2SK2919
7
R DS(on) - Tc
ID=1A
5
ID - Tc
VDS=10V VGS=10V
6
Static Drain-to-Source On-State Resistance, RDS (on) -
5
V
4
V
=2 GS
0V
Drain Current, ID - A
=1 GS
0V
4
3
3
2
2
1 1 0 -60 0 -60
-40
-20
0
20
40
60
80
100
120
140
160
-40
-20
0
20
40
60
80
100
120
140
160
Case Temperature, Tc - C
5
Case Temperature, Tc - C
2 10 7 5 3 2 1.0 7 5
V GS(off) - Tc
VDS=10V ID=1mV
I F - VSD
4
3
75 C 25 C
0.6
2
Diode Forward Current, IF - A
Cutoff Voltage, VGS(off) - V
1
0.1 7 5 3 2
0 -60
-40
-20
0
20
40
60
80
100
120
140
160
0
0.2
0.4
-25
0.8 1.0
Tc=
C
3 2
1.2
1.4
Case Temperature, Tc - C
5 3 2
Diode Forward Voltage, VSD - V
Ciss,Coss,Crss - VDS
VGS=0 f = 1MHz
SW Time - I D
1000 7 5
Switching Time, SW Time - ns
3 2 100 7 5 3 2 10 7 5 3
Ciss, Coss, Crss - pF
1000 7 5 3 2 100 7 5 3 2 10 7 5
VDD=200V VGS=10V P.W=1s D.C0.5%
Ciss
td(off )
tf
Coss
Crss
tr
td(on)
0
4
8
12
16
20
24
28
32
2 5
7
0.1
2
3
5
7
1.0
2
3
5
Drain-to-Source Voltage, VDS - V
Drain Current, ID - A
40
ASO
2 10 7 5
PD - Tc
IDP
Drain Current, ID - A
3 2 1.0 7 5 3 2 0.1 7 5
ID
1m
DC
10
10
<1s 10 10 s 0 s
Allowable Power Dissipation, PD - W
7 1000
35 30
s
Operation in this area is limited by RDS(on).
op
0m
ms
s
20
er
at
io
n
10
3 Single pulse 2 23 5 7 10
Tc=25C
2
3
5
7 100
2
3
5
0
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS - V
Case Temperature, Tc - C No.6121-3/4
2SK2919
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice.
PS No.6121-4/4


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